金属化聚乙脂膜电容器

型号 : MEB

数量 :

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METALLIZED POLYESTER FILM CAPACITOR (MEB)

金属化聚乙脂膜电容器(盒装)

适合使用于SPS、UPS、Monitor、电视、电子安定器等…


MEB TYPE:
RV 100VDC 250VDC 400VDC 630VDC
SIZE W H T P±1 W H T P±1 W H T P±1 W H T P±1
CAP
0.01 13.0 11.0 5.0 10.0 0.6 13.0 11.0 5.0 10.0 0.6 13.0 11.0 5.0 10.0 0.6 13.0 11.0 5.0 10.0 0.6
0.015 13.0 11.0 5.0 10.0 0.6 13.0 11.0 5.0 10.0 0.6 13.0 11.0 5.0 10.0 0.6 13.0 11.0 5.0 10.0 0.6
0.022 13.0 11.0 5.0 10.0 0.6 13.0 11.0 5.0 10.0 0.6 13.0 11.0 5.0 10.0 0.6 13.0 12.0 6.0 10.0 0.6
0.033 13.0 11.0 5.0 10.0 0.6 13.0 11.0 5.0 10.0 0.6 13.0 11.0 5.0 10.0 0.6 13.0 13.0 7.0 10.0 0.6
0.047 13.0 11.0 5.0 10.0 0.6 13.0 11.0 5.0 10.0 0.6 13.0 11.0 5.0 10.0 0.6 18.0 12.0 6.0 15.0 0.8
0.068 13.0 11.0 5.0 10.0 0.6 13.0 11.0 5.0 10.0 0.6 18.0 12.0 6.0 15.0 0.6 18.0 13.5 7.5 15.0 0.8
0.1 13.0 11.0 5.0 10.0 0.6 13.0 11.0 5.0 10.0 0.6 18.0 12.0 6.0 15.0 0.8 18.0 14.5 8.5 15.0 0.8
0.15 13.0 11.0 5.0 10.0 0.6 13.0 12.0 6.0 10.0 0.6 18.0 13.5 7.5 15.0 0.8 26.5 16.5 7.0 22.5 0.8
0.22 13.0 11.0 5.0 10.0 0.6 18.0 11.0 5.0 15.0 0.8 26.5 15.0 6.0 22.5 0.8 26.5 17.0 8.5 22.5 0.8
0.33 13.0 12.0 6.0 10.0 0.6 18.0 12.0 6.0 15.0 0.8 26.5 16.5 7.0 22.5 0.8 32.0 20.0 11.0 27.5 0.8
0.47 18.0 11.0 5.0 15.0 0.8 18.0 13.5 7.5 15.0 0.8 26.5 17.0 8.5 22.5 0.8 32.0 22.0 13.0 27.5 0.8
0.68 18.0 12.0 6.0 15.0 0.8 18.0 14.5 8.5 15.0 0.8 32.0 20.0 11.0 27.5 0.8          
1.0 18.0 13.5 7.5 15.0 0.8 26.5 17.0 8.5 22.5 0.8 32.0 22.0 13.0 27.5 0.8          
1.5 18.0 14.5 8.5 15.0 0.8 26.5 19.0 10.0 22.5 0.8 32.0 25.5 16.0 27.5 0.8          
2.2 26.5 17.0 8.5 22.5 0.8 32.0 20.0 11.0 27.5 0.8                    
3.3 26.5 19.0 10.0 22.5 0.8 32.0 22.0 13.0 27.5 0.8          
4.7 32.0 20.0 11.0 27.5 0.8 32.0 25.0 14.0 27.5 0.8          
6.8 32.0 22.0 13.0 27.5 0.8          
10 32.0 25.0 14.0 27.5 0.8                              


1. OPERATION TEMPERATURE : -40 ℃~ +85℃
2. CAPACITANCE RANGE 0.01~1.0μF 
3. CAPACITANCE TOLERANCE : ±5%(J),±10%(K) (other values on request)
4. RATED VOLTAGE : 100VDC,250VDC,400VDC,630VDC
5. DISSIPATION FACTOR : 1.0% Max at 1kHz, 25 ℃
6. INSULATION RESISTANCE : 
    ≧15,000 MΩ ( C≦.33μF )
    ≧5,000 MΩ*C ( C>.33μF )

Maximum pulse rise time (dv/dt) V/usec

      P
VCD      
10.0 15.0 22.5 27.5
100 6 3 2 1
250 11 7 4 3
400 20 10 5.5 5
630 30 15 8 7

1. DF值高,高频时DF变化较大不适用于共振及补振电路
2. 耐电压冲击性较佳
3. 采用金属化膜材料,具有自复性
4. 外壳为阻燃塑料外壳,内灌环氧树脂密封(complinance与符合UL94V – 0)